BFP620

BFP620 NPN三极管 20V 80mA 65GHz 110~270 SOT-343 marking/标记 AC 高增益低噪声RF晶体管

集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| 20V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| 2.3V 集电极连续输出电流ICCollector CurrentIC| 80mA 截止频率fTTranstion FrequencyfT| 65GHz 直流电流增益hFEDC Current GainhFE| 110~270 管压降VCE（sat）Collector-Emitter Saturation Voltage| 耗散功率PcPower Dissipation| 185mW/0.185W Description & Applications| NPN Silicon Germanium RF Transistor

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• High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz • High maximum stable gain Gms= 21.5 dB at 1.8 GHz Gms= 11 dB at 6 GHz • Gold metallization for extra high reliability 描述与应用| NPN硅锗射频晶体管 •高增益低噪声RF晶体管 •突出表现为广泛的无线应用 •非常适于CDMA和WLAN应用 •杰出的噪声指数为1.8GHz（F=0.7dB时）  杰出的噪声指数为6 GHz（F =1.3dB时） •高的最大稳定增益    GMS=21.5dB（1.8 GHz时） GMS=11dB（6 GHz时） •黄金金属额外的高可靠性