FDS2572

FAIRCHILD SEMICONDUCTOR  FDS2572  晶体管, MOSFET, N沟道, 4.9 A, 150 V, 0.04 ohm, 10 V, 4 V

The is an UltraFET® Trench N-channel MOSFET combines characteristics that enable benchmark efficiency in power conversion applications. Optimized for RDS ON, low ESR, low total and Miller gate charge. It is ideal for high frequency DC to DC converters, 48V I/P half-bridge/full-bridge, 24V forward and push-pull topologies.

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Low QRR body diode

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Maximized efficiency at high frequencies

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UIS Rated