FP75R12KT4B11BOSA1
晶体管, IGBT阵列&模块, N沟道, 75 A, 1.85 V, 385 W, 1.2 kV, Module
Summary of Features:
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- Low Switching Losses
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- Low VCEsat
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- Tvj op = 150°C
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- V CEsat with positive Temperature Coefficient
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- High Power and Thermal Cycling Capability
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- Integrated NTC temperature sensor
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- Copper Base Plate
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- Standard Housing
Benefits:
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- Compact module concept
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- Optimized customer’s development cycle time and cost
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- Configuration flexibility