FP75R12KT4B11BOSA1

晶体管, IGBT阵列&模块, N沟道, 75 A, 1.85 V, 385 W, 1.2 kV, Module

Summary of Features:

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Low Switching Losses

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Low VCEsat

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Tvj op = 150°C

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V CEsat with positive Temperature Coefficient

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High Power and Thermal Cycling Capability

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Integrated NTC temperature sensor

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Copper Base Plate

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Standard Housing

Benefits:

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Compact module concept

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Optimized customer’s development cycle time and cost

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Configuration flexibility