IPD30N06S2L13ATMA1

INFINEON  IPD30N06S2L13ATMA1  晶体管, MOSFET, N沟道, 30 A, 55 V, 0.0106 ohm, 10 V, 1.6 V

The IPD30N06S2L-13 is a N-channel logic level enhancement-mode MOSFET with lowest switching and conduction power losses for highest thermal efficiency.

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AEC-Q101 qualified

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MSL1 up to 260°C peak reflow

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Green device

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100% Avalanche tested

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Highest current capability

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World"s lowest RDS at 55V on in planar technology

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Optimized total gate charge enables smaller driver output stages