ZXTN25100DFHTA

DIODES INC.  ZXTN25100DFHTA  单晶体管 双极, NPN, 100 V, 175 MHz, 1.25 W, 2.5 A, 450 hFE

Jump-start your electronic circuit design with this versatile NPN GP BJT from Zetex. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 1810 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 7 V.