BSC060P03NS3EGATMA1

INFINEON  BSC060P03NS3EGATMA1  晶体管, MOSFET, P沟道, -100 A, -30 V, 0.0041 ohm, -10 V, -2.5 V

OptiMOS™P P 通道功率 MOSFET

**Infineon** **OptiMOS**™ P 通道电源 MOSFET 设计用于提供增强功能，以便达到质量指标。 特征包括超低切换损耗、通态电阻、雪崩额定值以及达到汽车解决方案的 AEC 标准。 应用包括：直流-直流、电动机控制、汽车和 eMobility。

增强型模式

雪崩等级

低切换和传导功率损耗

无铅引线电镀；符合 RoHS 标准

标准封装

OptiMOS™ P 通道系列：温度范围为 -55°C 至 +175°C

得捷:
MOSFET P-CH 30V 17.7/100A 8TDSON

立创商城:
P沟道 30V 17.7A 100A

欧时:
Infineon OptiMOS P 系列 Si P沟道 MOSFET BSC060P03NS3EGATMA1, 100 A, Vds=30 V, 8引脚 TDSON封装

e络盟:
晶体管, MOSFET, P沟道, -100 A, -30 V, 0.0041 ohm, -10 V, -2.5 V

艾睿:
As an alternative to traditional transistors, the BSC060P03NS3EGATMA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 2500 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology.

安富利:
Trans MOSFET P-CH 30V 17.7A 8-Pin TDSON T/R

Verical:
Trans MOSFET P-CH 30V 17.7A Automotive 8-Pin TDSON EP T/R

Newark:
# INFINEON  BSC060P03NS3EGATMA1  MOSFET Transistor, P Channel, -100 A, -30 V, 0.0041 ohm, -10 V, -2.5 V