PMV60EN,215

TO-236AB N-CH 30V 4.7A

表面贴装型 N 通道 4.7A（Tc） 280mW（Tj） TO-236AB（SOT23）

得捷:
MOSFET N-CH 30V 4.7A TO236AB

艾睿:
Trans MOSFET N-CH 30V 4.7A 3-Pin TO-236AB T/R

Chip1Stop:
Trans MOSFET N-CH 30V 4.7A 3-Pin TO-236AB T/R

Verical:
Trans MOSFET N-CH 30V 4.7A 3-Pin SOT-23 T/R

Newark:
The PMV60EN,215 is a 30V logic level N-channel enhancement mode Field Effect Transistor designed and qualified for use in computing, communications, consumer and industrial applications. This TrenchMOS™ transistor is suitable for high frequency applications due to fast switching characteristics.

Win Source:
MOSFET N-CH 30V 4.7A SOT-23