PMV60EN,215
数据手册.pdfNXP(恩智浦)
分立器件
TO-236AB N-CH 30V 4.7A
表面贴装型 N 通道 4.7A(Tc) 280mW(Tj) TO-236AB(SOT23)
得捷:
MOSFET N-CH 30V 4.7A TO236AB
艾睿:
Trans MOSFET N-CH 30V 4.7A 3-Pin TO-236AB T/R
Chip1Stop:
Trans MOSFET N-CH 30V 4.7A 3-Pin TO-236AB T/R
Verical:
Trans MOSFET N-CH 30V 4.7A 3-Pin SOT-23 T/R
Newark:
The PMV60EN,215 is a 30V logic level N-channel enhancement mode Field Effect Transistor designed and qualified for use in computing, communications, consumer and industrial applications. This TrenchMOS™ transistor is suitable for high frequency applications due to fast switching characteristics.
Win Source:
MOSFET N-CH 30V 4.7A SOT-23