IRF9520N

Trans MOSFET P-CH 100V 6.8A 3Pin 3+Tab TO-220AB

Description

Fifth Generation HEXFETs from utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Advanced Process Technology

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

P-Channel

Fully Avalanche Rated