APT30GP60BDQ1G

Trans IGBT Chip N-CH 600V 100A 463000mW 3Pin3+Tab TO-247

Minimize the current at your gate with the IGBT transistor from . Its maximum power dissipation is 463000 mW. It has a maximum collector emitter voltage of 600 V. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.