BC327-40ZL1G

ON SEMICONDUCTOR  BC327-40ZL1G  单晶体管 双极, PNP, -45 V, 260 MHz, 1.5 W, -800 mA, 250 hFE

Do you require a transistor in your circuit operating in the high-voltage range? This PNP general purpose bipolar junction transistor, developed by , is your solution. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1500 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V.