STB40NF10T4

STMICROELECTRONICS  STB40NF10T4  晶体管, MOSFET, N沟道, 40 A, 100 V, 28 mohm, 10 V, 2.8 V

The is a STripFET™ II N-channel Power MOSFET developed using STMicroelectronics unique Single Feature Size™ strip-based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

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Exceptional dV/dt capability

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Low gate charge at 100°C

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100% Avalanche tested

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Application oriented characterization

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-50 to 175°C Operating junction temperature range