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STD15N60M2-EP

晶体管, MOSFET, N沟道, 11 A, 600 V, 0.34 ohm, 10 V, 4 V

N-Channel 600V 11A Tc 110W Tc Surface Mount DPAK


得捷:
MOSFET N-CH 600V 11A DPAK


e络盟:
晶体管, MOSFET, N沟道, 11 A, 600 V, 0.34 ohm, 10 V, 4 V


艾睿:
Make an effective common gate amplifier using this STD15N60M2-EP power MOSFET from STMicroelectronics. Its maximum power dissipation is 110000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with mdmesh m2 technology. This N channel MOSFET transistor operates in enhancement mode.


Verical:
Trans MOSFET N-CH 600V 11A 3-Pin2+Tab DPAK Tube


STD15N60M2-EP PDF数据文档
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