GAL18V10-20LP

High Performance E2CMOS PLD Generic Array Logic

Description

The GAL18V10, at 7.5 ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable E2 floating gate technology to provide a very flexible 20-pin PLD. CMOS circuitry allows the GAL18V10 to consume much less power when compared to its bipolar counterparts. The E2 technology offers high speed <100ms erase times, providing the ability to reprogram or reconfigure the device quickly and efficiently.

Features

•HIGH PERFORMANCE E2CMOS®TECHNOLOGY

—7.5 ns Maximum Propagation Delay

—Fmax = 111 MHz

—5.5 ns Maximum from Clock Input to Data Output

—TTL Compatible 16 mA Outputs

—UltraMOS® Advanced CMOS Technology

•LOW POWER CMOS

—75 mA Typical Icc

•ACTIVE PULL-UPS ON ALL PINS

•E2CELL TECHNOLOGY

—Reconfigurable Logic

—Reprogrammable Cells

—100% Tested/100% Yields

—High Speed Electrical Erasure <100ms

—20 Year Data Retention

•TEN OUTPUT LOGIC MACROCELLS

—Uses Standard 22V10 Macrocell Architecture

—Maximum Flexibility for Complex Logic Designs

•PRELOAD AND POWER-ON RESET OF REGISTERS

—100% Functional Testability

•APPLICATIONS INCLUDE:

—DMA Control

—State Machine Control

—High Speed Graphics Processing

—Standard Logic Speed Upgrade

• ELECTRONIC SIGNATURE FOR IDENTIFICATION