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GAL16V8D-15LJ

SPLD - 简单可编程逻辑器件 5V 16 I/O

Description

The GAL16V8, at 3.5 ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable E2 floating gate technology to provide the highest speed performance available in the PLD market. High speed erase times <100ms allow the devices to be reprogrammed quickly and efficiently.

Features

•HIGH PERFORMANCE E2CMOS®TECHNOLOGY

—3.5 ns Maximum Propagation Delay

—Fmax = 250 MHz

—3.0 ns Maximum from Clock Input to Data Output

—UltraMOS® Advanced CMOS Technology

•50% to 75% REDUCTION IN POWER FROM BIPOLAR

—75mA Typ Icc on Low Power Device

—45mA Typ Icc on Quarter Power Device

•ACTIVE PULL-UPS ON ALL PINS

•E2CELL TECHNOLOGY

—Reconfigurable Logic

—Reprogrammable Cells

—100% Tested/100% Yields

—High Speed Electrical Erasure <100ms

—20 Year Data Retention

•EIGHT OUTPUT LOGIC MACROCELLS

—Maximum Flexibility for Complex Logic Designs

—Programmable Output Polarity

—Also Emulates 20-pin PAL® Devices with Full Function/Fuse Map/Parametric Compatibility

•PRELOAD AND POWER-ON RESET OF ALL REGISTERS

—100% Functional Testability

•APPLICATIONS INCLUDE:

—DMA Control

—State Machine Control

—High Speed Graphics Processing

—Standard Logic Speed Upgrade

•ELECTRONIC SIGNATURE FOR IDENTIFICATION

GAL16V8D-15LJ PDF数据文档
图片 型号 厂商 下载
GAL16V8D-15LJ Lattice Semiconductor 莱迪思
GAL16V8D-7LJN Lattice Semiconductor 莱迪思
GAL16V8D-15LJN Lattice Semiconductor 莱迪思
GAL16V8D-10QP Lattice Semiconductor 莱迪思
GAL16V8D-10LPI Lattice Semiconductor 莱迪思
GAL16LV8C-15LJ Lattice Semiconductor 莱迪思
GAL16V8D-15QP Lattice Semiconductor 莱迪思
GAL16V8D-15QJN Lattice Semiconductor 莱迪思
GAL16LV8D-5LJ Lattice Semiconductor 莱迪思
GAL16V8D-15LPN Lattice Semiconductor 莱迪思
GAL16V8D-25QJI Lattice Semiconductor 莱迪思