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NDD60N360U1T4G

600V,11A,360mOhm,单N通道功率MOSFET

Compared to traditional transistors, power MOSFETs, developed by , are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 114000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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NDD60N360U1T4G ON Semiconductor 安森美