SI4539DY

双N和P沟道增强型场效应晶体管 Dual N & P-Channel Enhancement Mode Field Effect Transistor

General Description 

These dual N-and P -Channel enhancement mode power field effect transistors are produced using "s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

Features

N-Channel 7.0 A,30 V, RDSON =0.028 W@ VGS=10 V

                              RDSON=0.040 W@ VGS= 4.5 V.

P-Channel -5.0 A,-30 V,RDSON=0.052 W @ VGS=-10 V

                              RDSON=0.080W@ VGS=-4.5 V.

High density cell designfor extremely low RDSON

High power and current handling capability in a widely used surface mount package.

Dual N & P-Channel MOSFET in surface mount package.