SI4532DY

FAIRCHILD SEMICONDUCTOR  SI4532DY  双路场效应管, MOSFET, N和P沟道, 3.9 A, 30 V, 53 mohm, 10 V, 3 V

The is a dual N/P-channel enhancement-mode FET produced using high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where switching, low in-line power loss fast and resistance to transients are needed.

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High density cell design for extremely low RDS ON

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High power and current handling capability in a widely used surface-mount package