PMBFJ109,215

NXP  PMBFJ109,215.  射频场效应管, JFET, N沟道, 25V, 40mA, 3-SOT-23

N 通道 JFET，

得捷:
JFET N-CH 25V SOT23

欧时:
NXP PMBFJ109,215 N通道 JFET 晶体管, Vds=25 V, Idss: min. 40mA, 3引脚 SOT-23 TO-236AB封装

贸泽:
JFET TAPE7 FET-RFSS

e络盟:
NXP  PMBFJ109,215.  射频场效应管, JFET, N沟道, 25V, 40mA, 3-SOT-23

艾睿:
Because of its uni-polar voltage control characteristics, the PMBFJ109,215 JFET transistor from NXP Semiconductors is perfect for preventing a voltage drop in your circuit. Its maximum power dissipation is 250 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This junction field effect transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It is made in a single configuration.

富昌:
PMBFJ108 Series Single N Channel 25 V 12 Ohm Surface Mount JFET - SOT-23

Chip1Stop:
Trans JFET N-CH 25V 3-Pin TO-236AB T/R

Verical:
Trans JFET N-CH 25V 3-Pin TO-236AB T/R

Newark:
# NXP  PMBFJ109,215  JFET Transistor, N Channel, -25 V, 40 mA, -2 V, SOT-23

RfMW:
PMBFJ109/SOT23/REELLP//

Win Source:
JFET N-CH 25V 250MW SOT23