PMBF170,215
NXP PMBF170,215 晶体管, MOSFET, N沟道, 300 mA, 60 V, 2.8 ohm, 10 V, 2 V
The is a N-channel enhancement-mode FET in a plastic package using TrenchMOS™ 1 technology. It is suitable for use in relay driver, high speed line driver and logic level translator applications.
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- Very fast switching
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- Logic level compatible
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- Subminiature surface-mount package
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- -65 to 150°C Operating junction temperature range