BFU610F,115

BFU610 系列 5.5 V 26 dB 增益 NPN 宽带 硅 射频 晶体管 - SOT-343F-4

BFU610F NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

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40 GHz fT silicon technology * High associated gain 12 dB at 5.8 GHz * Low noise high gain microwave transistor * Noise figure NF = 1.7 dB at 5.8 GHz

得捷:
RF TRANS NPN 5.5V 15GHZ 4DFP

e络盟:
晶体管 双极-射频, NPN, 5.5 V, 15 GHz, 136 mW, 10 mA, 90 hFE

艾睿:
Trans RF BJT NPN 5.5V 0.01A 136mW 4-Pin3+Tab DFP T/R

安富利:
Trans GP BJT NPN 5.5V 0.01A 4-Pin3+Tab DFP T/R

Chip1Stop:
Trans RF BJT NPN 5.5V 0.01A 136mW 4-Pin3+Tab DFP T/R

Verical:
Trans RF BJT NPN 5.5V 0.01A 136mW 4-Pin3+Tab DFP T/R

Newark:
# NXP  BFU610F,115  Bipolar - RF Transistor, NPN, 5.5 V, 15 GHz, 136 mW, 2 mA, 90 hFE

RfMW:
Transistor

DeviceMart:
TRANSISTOR NPN SOT343F-4