PMN30XPX

晶体管, MOSFET, 沟槽式, P沟道, -5.2 A, -20 V, 0.03 ohm, -4.5 V, -680 mV

P-channel enhancement mode Field-Effect Transistor FET in a small SOT457 SC-74 Surface-Mounted Device SMD plastic package using Trench MOSFET technology.

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Trench MOSFET technology

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Low threshold voltage

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Enhanced power dissipation capability of 1400 mW

立创商城:
20V, P沟道MOSFET

e络盟:
晶体管, MOSFET, 沟槽式, P沟道, -5.2 A, -20 V, 0.03 ohm, -4.5 V, -680 mV

艾睿:
Trans MOSFET P-CH 20V 5.2A 6-Pin TSOP T/R