PMN30XPX
数据手册.pdfNexperia(安世)
分立器件
晶体管, MOSFET, 沟槽式, P沟道, -5.2 A, -20 V, 0.03 ohm, -4.5 V, -680 mV
P-channel enhancement mode Field-Effect Transistor FET in a small SOT457 SC-74 Surface-Mounted Device SMD plastic package using Trench MOSFET technology.
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- Trench MOSFET technology
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- Low threshold voltage
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- Enhanced power dissipation capability of 1400 mW
立创商城:
20V, P沟道MOSFET
e络盟:
晶体管, MOSFET, 沟槽式, P沟道, -5.2 A, -20 V, 0.03 ohm, -4.5 V, -680 mV
艾睿:
Trans MOSFET P-CH 20V 5.2A 6-Pin TSOP T/R