IGD01N120H2BUMA1
Trans IGBT Chip N-CH 1200V 3.2A 28000mW 3Pin2+Tab DPAK T/R
Summary of Features:
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- Loss reduction in resonant circuits
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- Temperature stable behavior
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- Parallel switching capability
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- Tight parameter distribution
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- E off optimized for IC =1A
Target Applications:
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- SMPS
