JANTX2N3767
NPN功率硅晶体管 NPN POWER SILICON TRANSISTOR
Jump-start your electronic circuit design with this versatile NPN GP BJT from . This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 25000 mW. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.