SI2314EDS-T1-E3
VISHAY SI2314EDS-T1-E3 晶体管, MOSFET, N沟道, 4.9 A, 20 V, 33 mohm, 4.5 V, 950 mV
The is a 20VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for LI-ion battery protection applications.
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- 3000V ESD protected
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- -55 to 150°C Operating temperature range
贸泽:
MOSFET 20V 4.9A
艾睿:
Trans MOSFET N-CH 20V 3.77A 3-Pin SOT-23 T/R
Allied Electronics:
MOSFET N-CH 20V 3.77A SOT23-3
安富利:
Trans MOSFET N-CH 20V 3.77A 3-Pin TO-236 T/R
富昌:
单 N沟道 20 V 0.033 Ohms 表面贴装 功率Mosfet - TO-236
Verical:
Trans MOSFET N-CH 20V 3.77A 3-Pin SOT-23 T/R
