FQB7P20TM_F085

FAIRCHILD SEMICONDUCTOR  FQB7P20TM_F085  晶体管, MOSFET, P沟道, -7.3 A, -200 V, 0.54 ohm, -10 V, -3 V

The is a QFET® P-channel enhancement-mode Power MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and withstand high energy pulse in the avalanche and communication mode. It is well suitable for high efficiency switching DC-to-DC converters.

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Fast switching

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Improved dV/dt capability

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AEC-Q101 Qualified

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100% Avalanche tested

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19nC Typical low gate charge

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25pF Typical low Crss