FQB7P20TM_F085
数据手册.pdf
Fairchild
飞兆/仙童
分立器件
FAIRCHILD SEMICONDUCTOR FQB7P20TM_F085 晶体管, MOSFET, P沟道, -7.3 A, -200 V, 0.54 ohm, -10 V, -3 V
The is a QFET® P-channel enhancement-mode Power MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and withstand high energy pulse in the avalanche and communication mode. It is well suitable for high efficiency switching DC-to-DC converters.
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- Fast switching
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- Improved dV/dt capability
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- AEC-Q101 Qualified
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- 100% Avalanche tested
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- 19nC Typical low gate charge
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- 25pF Typical low Crss