SI4686DY-T1-E3
VISHAY SI4686DY-T1-E3 晶体管, MOSFET, N沟道, 18.2 A, 30 V, 0.0078 ohm, 10 V, 3 V
The is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for high-side DC-to-DC conversion applications.
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- 100% Rg tested
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- Extremely low Qgd WFET® technology for low switching losses
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- -55 to 150°C Operating temperature range
