SMUN5214T1G

数字晶体管（ BRT ） R1 = 10千欧， R2 = 47 K· Digital Transistors BRT R1 = 10 k, R2 = 47 k

- 双极 BJT - 单，预偏置 NPN - 预偏压 表面贴装型 SC-70-3（SOT323）

得捷:
TRANS PREBIAS NPN 50V SC70-3

立创商城:
SMUN5214T1G

艾睿:
Are you designing a digital processing circuit and are looking to apply the characteristics of traditional BJT&s;s within? Look no further than the NPN SMUN5214T1G digital transistor from ON Semiconductor. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 310 mW. It has a maximum collector emitter voltage of 50 V. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

安富利:
Trans Digital BJT NPN 50V 100mA 3-Pin SC-70 T/R

Chip1Stop:
Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SC-70 T/R

Verical:
Trans Digital BJT NPN 50V 100mA 310mW Automotive 3-Pin SC-70 T/R

Win Source:
TRANS PREBIAS NPN 202MW SC70-3