RJP5001APP-M0#T2

Trans IGBT Chip N-CH 500V 45000mW 3Pin3+Tab TO-220FL Tube

This IGBT transistor from Renesas is perfect if your circuit contains high currents passing through it. It has a maximum collector emitter voltage of 500 V. Its maximum power dissipation is 45000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has an operating temperature range of -40 °C to 150 °C. It is made in a single configuration.