2SK2955-E

硅N沟道MOS FET高速电源开关 Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching

Features

•  Low on-resistance

   RDS=0.010 Ωtyp.

•  High speed switching

•  4 V gate drive device can be driven from 5 V source

Chip1Stop:
Trans MOSFET N-CH 60V 45A 3-Pin3+Tab TO-3P Tube

Win Source:
Silicon N Channel MOS FET High Speed Power Switching