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BDV65B

DARLINGTONS 10安培互补硅功率晶体管 DARLINGTONS 10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS

The 10 A, 100 V NPN Bipolar Power Transistor is for use as an output devices in complementary general purpose amplifier applications. The NPN and BDV64B PNP are complementary devices.

Features

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High DC Current Gain HFE = 1000 min. @ 5 Adc
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Monolithic Construction with Built-in Base Emitter Shunt Resistors
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These devices are available in Pb-free packages. Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local sales office or representative.

BDV65B PDF数据文档
图片 型号 厂商 下载
BDV65B ON Semiconductor 安森美
BDV65BG ON Semiconductor 安森美
BDV64-S Bourns J.W. Miller 伯恩斯
BDV65A-S Bourns J.W. Miller 伯恩斯
BDV64A-S Bourns J.W. Miller 伯恩斯
BDV65-S Bourns J.W. Miller 伯恩斯
BDV65B-S Bourns J.W. Miller 伯恩斯
BDV65C-S Bourns J.W. Miller 伯恩斯
BDV64C-S Bourns J.W. Miller 伯恩斯
BDV64B-S Bourns J.W. Miller 伯恩斯
BDV64B ON Semiconductor 安森美