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74AUP1G332GW

低功耗的三输入或门 Low-power 3-input OR gate

逻辑类型Logic Type| 或门 OR Gate \---|--- 电路数Number of Circuits| 1 输入数Number of Inputs| 3 电源电压VccVoltage - Supply| 0.8V~3.6V 静态电流IqCurrent - Quiescent Max| 0.5uA 输出高,低电平电流Current - Output High, Low| -4mA,4mA 低逻辑电平Logic Level - Low| 0.7V~0.9V 高逻辑电平Logic Level - High| 1.6V~2V 传播延迟时间@Vcc,CLMax Propagation Delay @ V, Max CL| 5.5ns @ 3V ~ 3.6V,30pF Description & Applications| Low-power 3-input OR-gate;FEATURES Wide supply voltage range from 0.8 V to 3.6 V High noise immunity Complies with JEDEC standards: JESD8-12 0.8 V to 1.3 V JESD8-11 0.9 V to 1.65 V JESD8-7 1.2 V to 1.95 V JESD8-5 1.8 V to 2.7 V JESD8-B 2.7 V to 3.6 V ESD protection: HBM JESD22-A114-C Class 3A. Exceeds 5000 V MM JESD22-A115-A exceeds 200 V CDM JESD22-C101-C exceeds 1000 V Low static power consumption; ICC = 0.9 µA maximum Latch-up performance exceeds 100 mA per JESD 78 Class II Inputs accept voltages up to 3.6 V Low noise overshoot and undershoot < 10 % of VCC IOFF circuitry provides partial Power-down mode operation Multiple package options Specified from −40 °C to +85 °C and −40 °C to +125 °C 描述与应用| 低功耗3输入或门;特性 宽电源电压范围从0.8 V到3.6 V 高抗干扰 符合JEDEC标准: JESD8-12(0.8 V至1.3 V) JESD8-11(0.9 V至1.65 V) JESD8-7(1.2 V至1.95 V) JESD8-5(1.8 V到2.7 V) JESD8-B(2.7 V至3.6 V) ESD保护: HBM JESD22-A114-C3A级。超过5000 V MM JESD22-A115-A超过200 V CDM JESD22-C101-C超过1000 V 低静态功耗ICC=0.9μA(最大) 闭锁性能超过100 mA每JESD 78 II类 接受输入电压为3.6 V 低噪音冲和下冲

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