FS150R17PE4BOSA1

晶体管, IGBT阵列&模块, N沟道, 150 A, 1.95 V, 835 W, 1.7 kV, Module

Summary of Features:

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Extended Operation Temperature Tvj op

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Low VCEsat

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VCEsat with positive Temperature Coefficient

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High Power Density

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Isolated Base Plate

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Standard Housing

Benefits:

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Compact Modules

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Easy and most reliable assembly

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No Plugs and Cables required

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Ideal for Low Inductive System Designs