2SD1119GQL
2SD1119GQL NPN三极管 40V 3A 150MHz 230~380 1V SOT-89/SC-62 marking/标记 TQ 低频功率放大
集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| 40V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| 25V 集电极连续输出电流ICCollector CurrentIC| 3A 截止频率fTTranstion FrequencyfT| 150MHz 直流电流增益hFEDC Current GainhFE| 230~380 管压降VCE(sat)Collector-Emitter Saturation Voltage| 1V 耗散功率PcPower Dissipation| 1W Description & Applications| Silicon NPN epitaxial planer type low-frequency power amplification Features- .
- Low collector to emitter saturation voltage VCEsat * Satisfactory operation performances at high efficiency with the low-voltage power supply. * Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing 描述与应用| NPN硅外延平面型 低频功率放大 特点 *低集电极到发射极饱和电压VCE(SAT) *高效率令人满意的操作性能 低电压电源。 *迷你型包装,使瘦身的设备和 通过自动插入磁带包装和杂志 填料