PMV213SN

NXP  PMV213SN  晶体管, MOSFET, N沟道, 1.9 A, 100 V, 250 mohm, 10 V, 3 V

The is a N-channel standard level enhancement-mode FET in a plastic package using TrenchMOS® technology. It is suitable for use in DC-to-DC convertors switching applications.

.

Low conduction losses due to low ON-state resistance

.

-55 to 150°C Junction temperature range

Newark:
# NXP  PMV213SN  MOSFET Transistor, N Channel, 1.9 A, 100 V, 250 mohm, 10 V, 3 V