MAGX-001214-125L00

氮化镓HEMT的SiC脉冲功率晶体管125W峰值， 1200-1400兆赫， 300μs脉冲， 10 ％占空比 GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 1200-1400 MHz, 300μs Pulse, 10% Duty

RF Mosfet HEMT 50V 100mA 1.2GHz ~ 1.4GHz 18.4dB 125W

得捷:
TRANSISTOR GAN 125W 1.2-1.4GHZ

贸泽:
RF JFET Transistors 1.2-1.4GHz 50Volt 125W Pk Gain 18dB

Chip1Stop:
Trans JFET 4.8A GaN HEMT 3-Pin