TSHG5510

VISHAY  TSHG5510  红外发射器, 高速, 38 °, T-1 3/4 5mm, 100 mA, 1.45 V, 15 ns, 15 ns

The is a 830nm high speed Infrared Emitting Diode in GaAlAs double hetero DH technology with high radiant power, high speed and moulded in a clear. This diode is suitable for high pulse current operation.

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High reliability

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High radiant intensity

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±38° Angle of half sensitivity

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Low forward voltage

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Good spectral matching with Si photo-detectors