IRF530FP

N - 沟道增强型功率MOS晶体管 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■ TYPICAL RDSon = 0.12 Ω

■ 100% AVALANCHE TESTED

■ REPETITIVE AVALANCHE DATA AT 100oC

■ LOW GATE CHARGE

■ AVALANCHE RUGGED TECHNOLOGY

■ APPLICATION ORIENTED CHARACTERIZATION

■ HIGH CURRENT CAPABILITY

■ 175oC OPERATING TEMPERATURE

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SOLENOID AND RELAY DRIVERS

■ DC-DC & DC-AC CONVERTER

■ AUTOMOTIVE ENVRONMENT INJECTION, ABS, AIR-BAG, LAMP DRIVERS, Etc