A3T18H400W23SR6

射频金属氧化物半导体场效应RF MOSFET晶体管 Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 71 W Avg., 28 V

Overview

PREPRODUCTION

The A3T18H400W23S 71 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz.

This page contains information on a preproduction product. Specifications and information herein are subject to change without notice.

For additional information and sample availability contact your local Sales Office or NXP Authorized Distributor.

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## Features

* Advanced high performance in-package Doherty

* Designed for wide instantaneous bandwidth applications

* Greater negative gate-source voltage range for improved Class C operation

* Able to withstand extremely high output VSWR and broadband operating conditions

* Designed for digital predistortion error correction systems

* RoHS compliant

## Features RF Performance Table

### 1800 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQA = 300 mA, VGSB = 0.7 Vdc, Pout = 71 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

*

\---|---|---|---|---

1805 MHz| 17.0| 53.2| 7.8| –31.0

1840 MHz| 17.1| 53.4| 7.6| –31.6

1880 MHz| 16.8| 52.8| 7.4| –32.5