A3T18H360W23SR6

射频金属氧化物半导体场效应RF MOSFET晶体管 Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 63 W Avg., 28 V

Overview

The A3T18H360W23S 63 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz.

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## Features

* Advanced high performance in-package Doherty

* Designed for wide instantaneous bandwidth applications

* Greater negative gate-source voltage range for improved class C operation

* Able to withstand extremely high output VSWR and broadband operating conditions

* Designed for digital predistortion error correction systems

* RoHS compliant

## Features RF Performance Table

### 1800 MHz

Typical Doherty single-carrier W-CDMA performance: VDD = 28 Vdc, IDQA = 700 mA, VGSB = 0.6 Vdc, Pout = 63 W Avg., input signal PAR = 9.9 dB @ 0.01% probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

*

\---|---|---|---|---

1805 MHz| 16.3| 52.8| 7.7| –30.3

1840 MHz| 16.6| 52.3| 7.6| –31.7

1880 MHz| 16.6| 51.6| 7.5| –32.8