IXTT88N30P

N沟道 300V 88A

表面贴装型 N 通道 300 V 88A（Tc） 600W（Tc） TO-268AA

立创商城:
N沟道 300V 88A

得捷:
MOSFET N-CH 300V 88A TO268

贸泽:
MOSFET 88 Amps 300V 0.04 Rds

艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the IXTT88N30P power MOSFET, developed by Ixys Corporation. Its maximum power dissipation is 600000 mW. This device is made with polarht technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.

TME:
Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO268

Verical:
Trans MOSFET N-CH 300V 88A 3-Pin2+Tab TO-268