LM5111-1M

TEXAS INSTRUMENTS  LM5111-1M  双路驱动器, MOSFET, 低压侧, 3.5V-14V电源, 5A输出, 25ns延迟, SOIC-8

The is a dual 5A compound Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each "compound" output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability.

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Independently drives two N-channel MOSFETs

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Compound CMOS and bipolar outputs reduce output current variation

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Two channels can be connected in parallel to double the drive current

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Independent inputs TTL compatible

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Available in dual non-inverting and dual inverting and combination configurations

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Supply rail under-voltage lockout protection UVLO

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Pin compatible with industry standard gate drivers

This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.