IDV03S60C
第二代的thinQ SiC肖特基二极管 2nd Generation thinQ SiC Schottky Diode
The is a thinQ!™ 2nd generation 600V SiC Schottky Diode has emerged over the years as the industry standard. The IDVxxS60C family is extending the already broad portfolio with the TO220FullPAK package. In order to greatly reduce the impact of the internal isolation of the FullPAK on the thermal performance, is applying its new diffusion soldering process for attaching the chip to the lead frame. The result of this is nearly identical thermal characteristics to that of the SiC diodes in the non-isolated TO220 package. It offers switching behaviour independent of forward current, switching speed and temperature, no reverse recovery/no forward recovery, high temperature operation. It is used in motor drives, solar applications, UPS, SMPS CCM, PFC, server, telecom and AC-DC applications.
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- Revolutionary semiconductor material-silicon carbide
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- High surge current capability
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- Fully isolated package with nearly similar Rth, jc as the standard T0220
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- Pb-free lead plating
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- Qualified according to JEDEC for target applications
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- System efficiency improvement compared to Si diodes
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- System cost/size savings due to reduced cooling requirements
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- Good thermal performance without the need for additional isolation layer and washer
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- Enabling higher frequency/increased power density solutions
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- Higher system reliability due to lower operating temperatures and less fans
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- Reduced EMI