IRFIB6N60APBF

VISHAY  IRFIB6N60APBF.  功率场效应管, MOSFET, N沟道, 5.5 A, 600 V, 750 mohm, 10 V, 4 V

The is a 600V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for SMPS, uninterruptible power supply and high speed power switching applications.

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Low gate charge Qg results in simple drive requirement

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Improved gate, avalanche and dynamic dV/dt ruggedness

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Fully characterized capacitance and avalanche voltage and current

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High voltage isolation