PTFB072707FHV1R0XTMA1

High Power RF LDMOS FET, 270W, 28V, 728 – 768MHz

Summary of Features:

.

Broadband internal matching

.

Wide video bandwidth

.

Typical pulsed performance, 768 MHz, 28 V 10 μs pulse width,10% duty cycle, class AB

\- Output power at P1dB = 320 W

\- Gain = 17.5 dB

\- Efficiency = 60%

.

Integrated ESD protection: Human Body Model HBM Class 2 minimum per JESD22-A114

.

Capable of handling 5:1 VSWR @ 28 V, 270 W CW output power

.

Package H-34288-4/2