FP15R06W1E3BOMA1
晶体管, IGBT阵列&模块, N沟道, 22 A, 1.55 V, 81 W, 600 V, Module
Summary of Features:
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- Low Switching Losses
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- Trench IGBT 3
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- VCEsat with positive Temperature Coefficient
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- Low VCEsat
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- Al2O3 Substrate with Low Thermal Restistance
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- Compact Design
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- Solder Contact Technology
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- Rugged mounting due to integrated mounting clamps
Benefits:
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- Compact module concept
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- Optimized customer’s development cycle time and cost
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- Configuration flexibility