FP15R12W1T4BOMA1

晶体管, IGBT阵列&模块, N沟道, 28 A, 1.85 V, 130 W, 1.2 kV, Module

Summary of Features:

.

Low Switching Losses

.

Trench IGBT 3

.

VCEsat with positive Temperature Coefficient

.

Low VCEsat

.

Al2O3 Substrate with Low Thermal Restistance

.

Compact Design

.

Solder Contact Technology

.

Rugged mounting due to integrated mounting clamps

 

Benefits:

.

Compact module concept

.

Optimized customer’s development cycle time and cost

.

Configuration flexibility